? semiconductor components industries, llc, 2008 june, 2008 ? rev. 3 1 publication order number: mbr60h100ct/d mbr60h100ct, mbrb60h100ct switchmode ? power rectifier 100 v, 60 a features and benefits ? low forward voltage: 0.72 v @ 125 c ? low power loss/high efficiency ? high surge capacity ? 175 c operating junction temperature ? 60 a total (30 a per diode leg) ? pb ? free package is available applications ? power supply ? output rectification ? power management ? instrumentation mechanical characteristics: ? case: epoxy, molded ? epoxy meets ul 94 v ? 0 @ 0.125 in ? weight (approximately): 1.9 grams (to ? 220) 1.7 grams (d 2 pak) ? finish: all external surfaces corrosion resistant and terminal leads are readily solderable ? lead temperature for soldering purposes: 260 c max. for 10 seconds ? esd rating: human body model = 3b machine model = c maximum ratings please see the table on the following page to ? 220ab case 221a plastic 3 4 1 schottky barrier rectifier 60 amperes, 100 volts 1 3 2, 4 2 marking diagram http://onsemi.com device package shipping ? ordering information mbr60h100ct to ? 220 50 units/rail MBR60H100CTG to ? 220 (pb ? free) 50 units/rail ayww b60h100g a k a a = assembly location y = year ww = work week b60h100 = device code g = pb ? free package aka = polarity designator ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d. mbrb60h100ctt4g d 2 pak (pb ? free) 800/ tape & reel 3 4 1 d 2 pak case 418b style 3 ayww b60h100g aka
mbr60h100ct, mbrb60h100ct http://onsemi.com 2 maximum ratings (per diode leg) rating symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 100 v average rectified forward current (t c = 155 c) per diode per device i f(av) 30 60 a peak repetitive forward current (square wave, 20 khz, t c = 151 c) i frm 60 a nonrepetitive peak surge current (surge applied at rated load conditions halfwave, single phase, 60 hz) i fsm 350 a operating junction temperature (note 1) t j +175 c storage temperature t stg 65 to +175 c voltage rate of change (rated v r ) dv/dt 10,000 v/ s controlled avalanche energy (see test conditions in figures 9 and 10) w aval 400 mj esd ratings: machine model = c human body model = 3b > 400 > 8000 v stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may af fect device reliability. 1. the heat generated must be less than the thermal conductivity from junction ? to ? ambient: dp d /dt j < 1/r ja . thermal characteristics characteristic symbol value unit maximum thermal resistance ? junction ? to ? case (min. pad) ? junction ? to ? ambient (min. pad) r jc r ja 1.0 70 c/w electrical characteristics (per diode leg) characteristic symbol min typ max unit maximum instantaneous forward voltage (note 2) (i f = 30 a, t j = 25 c) (i f = 30 a, t j = 125 c) (i f = 60 a, t j = 25 c) (i f = 60 a, t j = 125 c) v f ? ? ? ? 0.80 0.68 0.93 0.81 0.84 0.72 0.98 0.84 v maximum instantaneous reverse current (note 2) (rated dc voltage, t j = 125 c) (rated dc voltage, t j = 25 c) i r ? ? 2.0 0.0013 10 0.01 ma 2. pulse test: pulse width = 300 s, duty cycle 2.0%.
mbr60h100ct, mbrb60h100ct http://onsemi.com 3 figure 1. typical forward voltage figure 2. maximum forward voltage i r , maximum reverse current (amps) i r , reverse current (amps) figure 3. typical reverse current figure 4. maximum reverse current 20 0 v r , reverse voltage (volts) 1e ? 01 1e ? 02 1e ? 03 1e ? 06 1e ? 08 40 t j = 125 c t j = 150 c t j = 25 c figure 5. current derating, case per leg figure 6. current derating, ambient per leg 60 80 100 1e ? 07 1e ? 05 1e ? 04 20 0 v r , reverse voltage (volts) 1e ? 01 1e ? 02 1e ? 03 1e ? 06 1e ? 08 40 t j = 125 c t j = 150 c t j = 25 c 60 80 100 1e ? 07 1e ? 05 1e ? 04 v f, instantaneous forward voltage (volts) 0.2 0.4 1.0 0.6 0.8 0.1 i , instantaneous forward current (amp s f 25 c t j = 150 c 100 10 1.0 125 c 0.1 0.3 0.5 0.7 0.9 1.2 0.0 175 c t c , case temperature (c ) 135 4.0 0 dc square wave 145 155 160 i , average forward current (amps) f (av) 12 16 8.0 140 150 170 175 165 24 20 130 180 i , average forward current (amps) f (av) t a , ambient temperature ( c) 050 25 75 2.0 4.0 6.0 8.0 10 12 14 16 0 100 125 150 175 square wave rated voltage applied r ja = 16 c/w dc r ja = 70 c/w (no heatsink) dc 18 20 22 24 1.1 v f, instantaneous forward voltage (volts) 0.2 0.4 1.0 0.6 0.8 0.1 i , instantaneous forward current (amp s f 25 c t j = 150 c 100 10 1.0 125 c 0.1 0.3 0.5 0.7 0.9 1.2 0.0 175 c 1.1 28 36 40 32 48 44 26
mbr60h100ct, mbrb60h100ct http://onsemi.com 4 c, capacitance (pf) 0 v r , reverse voltage (volts) 100 10 40 80 t j = 25 c figure 7. forward power dissipation 100 20 60 10000 1000 figure 8. capacitance p , average forward power dissipation (watt s f (av) i f(av) , average forward current (amps) 04 12 816 24 16 0 8 4 12 square wave 20 24 28 20 28 dc t j = 175 c 56 48 32 40 36 44 52 60 32 36 44 40 48 52 56 60
mbr60h100ct, mbrb60h100ct http://onsemi.com 5 mercury switch v d i d dut 10 mh coil +v dd i l s 1 bv dut i l i d v dd t 0 t 1 t 2 t figure 9. test circuit figure 10. current ? voltage waveforms the unclamped inductive switching circuit shown in figure 9 was used to demonstrate the controlled avalanche capability of this device. a mercury switch was used instead of an electronic switch to simulate a noisy environment when the switch was being opened. when s 1 is closed at t 0 the current in the inductor i l ramps up linearly; and energy is stored in the coil. at t 1 the switch is opened and the voltage across the diode under test begins to rise rapidly, due to di/dt ef fects, when this induced voltage reaches the breakdown voltage of the diode, it is clamped at bv dut and the diode begins to conduct the full load current which now starts to decay linearly through the diode, and goes to zero at t 2 . by solving the loop equation at the point in time when s 1 is opened; and calculating the energy that is transferred to the diode it can be shown that the total ener gy transferred is equal to the ener gy stored in the inductor plus a finite amount of energy from the v dd power supply while the diode is in breakdown (from t 1 to t 2 ) minus any losses due to finite component resistances. assuming the component resistive elements are small equation (1) approximates the total energy transferred to the diode. it can be seen from this equation that if the v dd voltage is low compared to the breakdown voltage of the device, the amount of energy contributed by the supply during breakdown is small and the total energy can be assumed to be nearly equal to the energy stored in the coil during the time when s 1 was closed, equation (2). w aval 1 2 li 2 lpk bv dut bv dut v dd w aval 1 2 li 2 lpk equation (1): equation (2):
mbr60h100ct, mbrb60h100ct http://onsemi.com 6 package dimensions d 2 pak 3 case 418b ? 04 issue j seating plane s g d ? t ? m 0.13 (0.005) t 23 1 4 3 pl k j h v e c a dim min max min max millimeters inches a 0.340 0.380 8.64 9.65 b 0.380 0.405 9.65 10.29 c 0.160 0.190 4.06 4.83 d 0.020 0.035 0.51 0.89 e 0.045 0.055 1.14 1.40 g 0.100 bsc 2.54 bsc h 0.080 0.110 2.03 2.79 j 0.018 0.025 0.46 0.64 k 0.090 0.110 2.29 2.79 s 0.575 0.625 14.60 15.88 v 0.045 0.055 1.14 1.40 ? b ? m b w w notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 418b ? 01 thru 418b ? 03 obsolete, new standard 418b ? 04. f 0.310 0.350 7.87 8.89 l 0.052 0.072 1.32 1.83 m 0.280 0.320 7.11 8.13 n 0.197 ref 5.00 ref p 0.079 ref 2.00 ref r 0.039 ref 0.99 ref m l f m l f m l f variable configuration zone r n p u view w ? w view w ? w view w ? w 123 style 3: pin 1. anode 2. cathode 3. anode 4. cathode *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* 8.38 0.33 1.016 0.04 17.02 0.67 10.66 0.42 3.05 0.12 5.08 0.20 mm inches scale 3:1
mbr60h100ct, mbrb60h100ct http://onsemi.com 7 package dimensions to ? 220 case 221a ? 09 issue af notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. style 6: pin 1. anode 2. cathode 3. anode 4. cathode dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.161 3.61 4.09 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.014 0.025 0.36 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane ? t ? c s t u r j on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. mbr60h100ct/d switchmode is a trademark of semiconductor components industries, llc. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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